At IEEE International Electron Devices Meeting (IEDM 2012), imec addressed key challenges of scaling beyond silicon-channel finFETs. Imec showed that channel mobility can be boosted by growing non-Si channels on a strain relaxed buffer (SRB), and demonstrated excellent scalability potential of the technology. Moreover, imec revealed insight on the unique influence oxide trapping has on the gate stack mobility in High-Mobility Ge and III-V channels. For logic device technology, the industry p...